Avalanche transistors are semiconducting devices that utilize the avalanche breakdown principle!
Avalanche breakdown is a unique phenomenon that occurs when a high voltage is applied to a p-n junction, to switch from an off state to an on state.
Avalanche transistors are broadly used in various high-voltage and high-frequency electronic circuits like:
- Fast (High-Speed) Pulse Generators
- Microwave Frequency Generators
- Laser Diode Drivers for LIDARs
- Fast Edge Switch Generators...
Avalanche transistors are similar in structure to conventional bipolar junction transistors (BJTs), consisting of three layers of semiconductor material that form two p-n junctions. These layers are known as the Emitter, Base, and Collector.
The working of an avalanche transistor is characterized by the breakdown of the collector-base junction. When the voltage across the collector-base junction exceeds the breakdown voltage, the transistor rapidly switches from off to on, allowing a large current to flow.
Nowadays, Avalanche Transistors specifically designed for low voltage Avalanche Mode operation is also available from various vendors. The FMMT411 NPN Avalanche Transistor, available in SOT23 SMD package, is a good example (click below image to enlarge).
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